The BS170 is designed as one kind of N-channel enhancement mode field effect transistor which produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. Features of the BS170 are:(1)high density cell design for low RDS(ON);(2)voltage controlled small signal switch;(3)rugged and reliable;(4)high saturation current capability.

The absolute maximum ratings of the BS170 can be summarized as:(1)drain-source voltage:60 V;(2)drain-gate voltage (RGS<1MΩ):60 V;(3)gate-source voltage:±20 V;(4)drain current-continuous:500 mA;(5)drain current-pulsed:1200 mA;(6)maximum power dissipation:830 mW;(7)derate above 25°C:6.6 mW/°C;(8)operating and storage temperature range:-55 to 150 °C;(9)maximum lead temperature for soldering purposes, 1/16″ from case for 10 seconds: 300°C;(10)thermal resistacne,junction-to-ambient:150°C/W;(11)drain-source breakdown voltage:60 V;(12)zero gate voltage drain current:0.5 μA;(13)gate-body leakage,forward:10 nA.If you want to know more information such as the electrical characteristics about the BS170,please download the datasheet in or .